Optics of Excitons in Confined Systems Proceedings of the INT Meeting Italy 24 27 September 1991

The book is divided into the following sections: quantum wells, wires, and dots; superlattices; nonlinear optical properties of confined systems; and effects of external fields on confined systems.

Optics of Excitons in Confined Systems  Proceedings of the INT Meeting  Italy  24 27 September 1991

Optics of Excitons in Confined Systems provides an overview of research in semiconductors that exhibit resonance enhanced optical nonlinearities in the frequency range close to the valence-conduction band gap. The book is divided into the following sections: quantum wells, wires, and dots; superlattices; nonlinear optical properties of confined systems; and effects of external fields on confined systems. Topics range from fundamental theory to more applied aspects of excitons in confined sytems.

Effect of Static Electric Fields on The Electronic And Optical Properties of Layered Semiconductor Nanostructures

Phys Rev B Condens Matter 1991; 44(23): 13085-8. [http://dx.doi.org/10.1103/PhysRevB.44.13085][PMID: 9999496] D'Andrea A, Ed. Optics of excitons in confined systems. Proceedings of the INT Meeting; 1991 September 24-27; Italy.

Effect of Static Electric Fields on The Electronic And Optical Properties of Layered Semiconductor Nanostructures

This volume investigates the theory of the effect of static electric fields on one-electron states in. nanocylindrical and nanospherical heterolayers and quantized semiconductor films. Homogeneous external electrostatic field for all these structures has been considered as a "universal" modulating factor. For structures with radial symmetry, a study on the influence of radial static field and the electric field of a charged ring on one-electron states is presented. Chapters focusing on homogeneous field effect on low-dimensional excitonic states in the quantized films and quantum wires - in both wide bandgap and narrowband semiconductors - are also included. Other contents include calculations weak, moderate and strong electric fields, quantum-mechanical approximation and perturbation theory, the quasi-classical approximation (WKB method). Readers will benefit from the varied methodological to the subject which gives them a concrete analytical framework to solve problems related to nanoscale semiconductor design. The reference should prove to be useful to academics and professionals working in semiconductor nanoelectronics research and development.

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